By solving the NEGF/Poisson equations self-consistently using a finite difference method, the electrical conductivity σ and Seebeck coefficient S of the material are numerically computed. The BTE is solved by using a finite volume method to obtain the phonon thermal conductivity k{sub p} more » and the Wiedemann-Franz law is used to obtain the electronic thermal conductivity k{sub e}.
The Seebeck coefficient, electrical conductivity, and thermal conductivity of individual chromium disilicide nanowires were characterized using a suspended microdevice and correlated with the crystal structure and growth direction obtained by transmission electron microscopy on the same nanowires. The obtained thermoelectric figure of merit of the nanowires was comparable to the bulk values
15/4/2010· 1. A water-based polishing slurry for polishing a silicon carbide single crystal substrate, wherein the slurry comprises abrasive particles having a mean particle size of 1 to 400 nm and an inorganic acid, and the slurry has a pH of less than 2 at 20 C. 2.
Seebeck coefficient (S) is calculated in Silicon with periodic potentials using the potential operator in Wigner approach. Rode’s iterative method is used to calculate the perturbed distribution function (gi) due to the applied electricfield and the quantum evolution due to the rapid varying potentials.
such as silicon, mixed silicon-germanium, and gallium arsenide or silicon carbide, suitably doped to provide a large Seebeck coefficient. The radial flow of current I between the source and the drain takes place at a voltage drop IR, where R is the ohmic
The average sensitivity coefficient was 201.6 μV/K. We have found the optimal annealing process at this magnetron sputtering process, but the Seebeck coefficient of In 2 O 3 in the literature is about −200 μV/K, and the Seebeck coefficient of WRe26 is
Seebeck coefficient and electrical impedance at >1200C TRL 7 2nd QTR FY18 Preparation of robust SiC nano-fibers in aerogel matrix N/A the fiber/aerogel composite is stable at >1000C TRL 6 3rd QTR FY18 p or n-type doping of SiC nano-fibers N/A numerous
The silicon carbide semiconductor body has at least first and second impurity regions forming a PN junction therebetween. The temperature is sensed by the impedance response across the PN junction. A high impedance, junction thermistor for sensing temperatures from about -200*C. to above 1,400*C. is provided with a semiconductor body of silicon carbide.
All investigated multi-layer graphene samples showed a positive Seebeck coefficient in aient conditions and turned negative after vacuum-annealing at 550 K in a vacuum of 2 x 10$^{-7}$ Torr. In contrast, monolayer graphene for both Si- and C- faces showed a relatively small negative Seebeck coefficient in aient conditions and saturated at a greater negative value after vacuum-annealing.
Impact of phonon drag effect on Seebeck coefficient in p-6H-sic: Experiment and simulation. In: Peder Bergman and Erik Janzen (Ed.). Silicon Carbide and Related materials (407−410)..
Seebeck coefficient vs. electron density at different temperatures. Closed syols -- data for the samples doped with P. Open syols -- data for the samples doped with As. 1 -- T = 300 K. x = 0.2, 0.3, and 0.4; Two syols below curve 1 represent the data T T
The Seebeck coefficient of uranium dioxide at room temperature is about 750 µV/K, a value significantly higher than the 270 µV/K of thallium tin telluride (Tl 2 SnTe 5) and thallium germanium telluride (Tl 2 GeTe 5) and of bismuth-tellurium alloys, other materials .
Advancing Silicon Carbide Electronics Technology II $ 125.00 Advanced Appliions of Bio-degradable Green Composites $ 125.00 Additive Manufacturing of Metals $ 125.00 Magnetochemistry $ 125.00 Neutron Radiography - WCNR-11 $ 0.00 – $ 125.00 $ $
Off-stoichiometric silicon carbide (SiC), C- and Si-added SiC (6H, α-type), with an excess amount of C or Si from 1 to 5 mol%, were fabried by spark plasma sintering at 2373 K and 50 MPa in a vacuum. The microstructure, electrical, and thermal properties of
silicon (Si) and silicon-carbide (SiC), and p-type films composed of alternating layers of two types of boron-carbide, B 4 C and B 9 C. These films have shown excellent thermoelectric properties in the 250-500 C temperature range, appropriate for waste heat
The U.S. Department of Energy''s Office of Scientific and Technical Information OSTI.GOV Conference: Silicon Carbide Lateral Overtone Bulk Acoustic Resonator with Ultrahigh Quality Factor.
By using a Si cap layer, a MnSi 1.7 film with a Seebeck coefficient of -292 μ V/K and electrical resistivity of 23 × 10-3 Ω-cm at room temperature is obtained. The power factor reaches 1636 μW/mK 2 at 483 K.
Recently, Yamaguchi et al. proposed a self-cooling device that does not require additional power circuits for cooling because it is Peltier-cooled using its own current in conjunction with a thermoelectric material. Silicon carbide is a promising thermoelectric material for this technology since its electrical conductivity, thermal conductivity, and Seebeck coefficient are higher than those of
Abstract Seebeck coefficients of randomly distributed single-walled carbon nanotubes (SWCNTs) coined with Silicon Carbide (SiC) nanoparticles were experimentally determined.The Seebeck coefficients of pristine SiC/SWCNT samples were compared with those ofSiC/SWCNT samples doped with P-type (Boron) and N-type (Phosphorous) sol–gel dopants.
There is provided a thermoelectric conversion material formed of an Fe2TiSi-based full-Heusler alloy to which La is added, wherein La is solid-dissolved in the Fe2TiSi-based full
Seebeck coefficient of all nanocomposites is enhanced at 773 K due to energy filtering that stems from the introduction of CNTs - Mg 2 Si 0.877 Ge 0.1 Bi 0.023 interfaces. The lattice thermal conductivity of the nanocomposites is reduced due to the phonon
Seebeck coefficients of randomly distributed single-walled carbon nanotubes (SWCNTs) coined with Silicon Carbide (SiC) nanoparticles were experimentally determined.The Seebeck coefficients of pristine SiC/SWCNT samples were compared with those ofSiC/SWCNT samples doped with P-type (Boron) and N-type (Phosphorous) sol–gel dopants.. Pristine SiC/SWCNT samples were prepared by …
Ryota Kobayashi, Junichi Tatami, Toru Wakihara, Takeshi Meguro, Katsutoshi Komeya, Temperature Dependence of the Electrical Properties and Seebeck Coefficient of AlN–SiC Ceramics, Journal of the American Ceramic Society, 10.1111/j.1551-2916.200589,
The Seebeck coefficient of all nanocomposites is enhanced at 773 K due to energy filtering that stems from the introduction of CNTs - Mg2Si0.877Ge0.1Bi0.023 interfaces. The coined effect of CNTs on both thermal and electrical conductivity leads to an approximately 20% power factor improvement, with the best sample reaching a maximum value of ~19 μW cm–1K–2 at 773 K.
by alternating silicon and silicon carbide layers to form an n‐type quantum well. Superlattices of 31 bi‐layers of Si/SiC (10 nm each) were deposited on silicon, quartz, and mullite substrates using a high‐speed, ion‐ beam sputter deposition process, and the Seebeck coefficient
Copyright © 2020.sitemap